Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry
US5933190A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Apr 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel structure for CMOS imaging applications, the pixel structure including a photosensitive element, a load transistor in series with the photosensitive element, a first reading transistor, coupled to the photosensitive element and to the load transistor, for reading out signals acquired in the photosensitive element and converting the signals to a voltage drop across the load transistor. The gate length of at least the load transistor is increased by at least 10% compared to a gate length of transistors manufactured according to layout rules imposed by a CMOS manufacturing process, thereby increasing the light sensitivity of the pixel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.