Crystal substrate processing
US5933707A · kind A · utility
10Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Mar 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure relates to the fabrication of components on a single crystal substrate. A method is disclosed of overcoming the problems encountered in defining etched features on a silicon substrate. In particular, there is disclosed a method of producing a multichip module comprising a silicon substrate having surface features for the placement of components. An organic dielectric is applied to the substrate prior to the use of an etchant whereby interconnects can be defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.