Apparatus and method for forming I-III-VI.sub.2 thin-film layers
US5935324A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Apr 28, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for forming I-III-VI.sub.2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI.sub.2 thin-film layer and a vapor source of an element of group VI of the periodic table are placed. The precursor and vapor source are heated under vacuum to form the I-III-VI.sub.2 thin-film layer. The reaction chamber is divided into a reaction compartment A having the precursor placed therein and a reaction compartment B having the vapor element of group IV placed therein. A communication channel C is provided between the reaction compartments A and B, and a heating unit controlled by a temperature control unit is provided exterior to each of the reaction compartments A and B.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.