Photovoltaic element and manufacturing method thereof
US5935344A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1996 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Oct 24, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic element having improved conversion efficiency and improved light confining property as well as a method of manufacturing the photovoltaic element with superior productivity are provided. The photovoltaic element includes an n type single crystal silicon substrate having first and second main surfaces, an intrinsic amorphous silicon layer formed on the first main surface, a p type amorphous silicon layer formed thereon, a conductive thin film formed thereon, a collecting electrode formed thereon, an intrinsic amorphous silicon layer formed on the second main surface of n type single crystal silicon substrate, an n type amorphous silicon layer formed thereon, a conductive thin film formed thereon and a back electrode formed thereon. At a peripheral portion of a laminated portion including the intrinsic amorphous silicon layer formed on the first main surface of the n type single crystal silicon substrate, the p type amorphous silicon layer and the conductive thin film, a trench deep enough to reach at least the intrinsic amorphous semiconductor layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.