Patent · US Expired

Process and device for the lighting-supported structuring of porous silicon

US5935410A · kind A · utility

3Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 19, 1997
Grant dateAug 10, 1999
Priority date
Expiry dateSep 19, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3063
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a selected area of a p-doped substrate in order to effect etching and structuring of the porous silicon in another area. A device for carrying out the process includes an illuminating system for supporting the etching process and for structuring the porous silicon, in which the illuminating system is selectively aimed during or after the formation of the porous silicon directly at a selected area of p-doped substrate in order to effect etching and structuring of the porous silicon in another area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.