Process and device for the lighting-supported structuring of porous silicon
US5935410A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a selected area of a p-doped substrate in order to effect etching and structuring of the porous silicon in another area. A device for carrying out the process includes an illuminating system for supporting the etching process and for structuring the porous silicon, in which the illuminating system is selectively aimed during or after the formation of the porous silicon directly at a selected area of p-doped substrate in order to effect etching and structuring of the porous silicon in another area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.