Process for forming a semiconductor device
US5935871A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In one particular embodiment, a solution having a pH greater than the isoelectric point of alumina particles is exposed to the surface of an interconnect material of a conductive layer (42) to passivate a portion of the interconnect material while changing the charge of the slurry particles (52) such that they are repelled away from the surface of the substrate and removed by the cleaning solution, or other cleaning processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.