Semiconductor sensor having multi-layer movable beam structure film
US5936159A · kind A · utility
12Cited by
10References
10Claims
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Key dates
| Filing date | Nov 25, 1996 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Nov 25, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.