Semiconductor device including a tunnel effect element
US5936265A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Mar 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having an element region on the main surface thereof, an element isolation region formed to surround the element region on the main surface of the semiconductor substrate, a gate electrode formed over the element region with a gate insulating film disposed therebetween, a first and a second impurity diffusion region formed on a surface of the element region on both sides of at least part of the gate electrode, a first channel region formed in the surface of the element region below the gate electrode between the first and the second impurity diffusion region when a first preset voltage is applied to the gate electrode, and a first tunnel diode formed in a first interface region between the first impurity diffusion region and the first channel region when the first preset voltage is applied to the gate electrode, wherein the first interface region in which the first tunnel diode is formed is formed in position separated from the element isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.