Semiconductor devices and methods with tunnel contact hole sources
US5936266A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Oct 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor devices and methods are disclosed in which the amount of p-type material can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication. A form of the disclosure is directed to a generally planar semiconductor device wherein a layer of p-type semiconductor material is disposed over a layer of n-type semiconductor material, and an electric potential is coupled between the p-type layer and the n-type layer, and wherein current in the device that is lateral to the plane of the layers is coupled into the p-type layer. A tunnel junction is adjacent the p-type layer for converting the lateral current into hole current. In an embodiment of this form of the disclosure, the tunnel junction is an n+/p+ junction oriented with the p+ portion thereof adjacent the p-type layer. The lateral current can be electron current in the n+ layer and/or electron current in a further layer of n-type material disposed over the tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.