Semiconductor device with film covering
US5936300A · kind A · utility
18Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Mar 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pair of source/drain regions are formed on a semiconductor substrate at a predetermined interval. A gate insulator film is formed on the semiconductor substrate between the source/drain regions of the pair. A gate electrode is formed on the gate insulator film. A film for covering the gate electrode and the source/drain regions has a low permeability against water and a hydroxide group, and has a thickness greater than 3 nm and less than 5 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.