Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material
US5937273A · kind A · utility
13Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1995 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant layer of the material gas, using selective growth mask having opening portion consisting of first region having a narrow width and second region having a wide width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.