Method of fabricating submicron FETs with low temperature group III-V material
US5937285A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.