Semiconductor integrated circuit
US5937399A · kind A · utility
10Cited by
5References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 11, 1996 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Jun 11, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit includes one or more neuron MOS transistors on a substrate. The MOS transistor comprises a semiconductor region of one conductivity type, source and drain regions of opposite conductivity type disposed in this region, floating gate disposed on an insulating film between the source and drain regions, and a plurality of input coupling electrodes making capacitive coupling with the floating gate through the insulating film, wherein the floating gate is connected to at least one switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.