Semiconductor light emitting device
US5939735A · kind A · utility
33Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.