Monolithic RF mixed signal IC with power amplification

US5939753A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Jun Ma · 流花街道, CN
• Han-Bin K. Liang · Mesa, US
• David Ngo · Shrewsbury, US
• Shih K. Cheng · Scottsdale, US
• Edward T. Spears · Stokesdale, US
• Bruce R. Yeung · Chandler, US

Key dates

• Filing date: Apr 2, 1997
• Grant date: Aug 17, 1999
• Expiry date: Apr 2, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

A monolithic integrated circuit die (10) is fabricated to include unilateral FETs (113, 114, 115), RF passive devices such as a double polysilicon capacitor (57), a polysilicon resistor (58), and an inductor (155), and an ESD protection device (160). A first P.sup.+ sinker (28) provides signal isolation between two FETs (113, 115) separated by the first sinker (28) and is coupled to a source region (86) of a power FET (115) via a self-aligned titanium silicide structure (96). A second P.sup.+ sinker (29) is coupled to a bottom plate (44) of the double polysilicon capacitor (57). A third P+ sinker (178) is coupled to a source region (168) of the ESD protection device (160) via another titanium silicide structure (174).