High efficiency power amplifier using HITFET driver circuit
US5939941A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1997 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Sep 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high efficiency power amplifier includes an integrated circuit with a heterojunction interband tunneling field effect transistor (HITFET) amplifier coupled to receive high frequency (into the GHz) RF signals. The HITFET amplifier is constructed to receive the RF signal with a given frequency at the input terminal and to produce a substantially square wave signal at the given frequency at an output terminal in response to the RF signal applied to the input terminal. The gate of a switching FET connected as a class E amplifier is coupled to the output of the HITFET for receiving the square wave signal and an impedance matching output circuit is coupled to the drain of the switching FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.