Ultra-high density memory device
US5940314A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1998 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Jan 20, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/947
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out. Also, through uniform radiation of circular polarized light onto the GaAs substrate and application of a relatively low voltage, tunneling current is caused to flow between the tip and the substrate, which tunneling current changes in accordance with the magnetization orientation of molecules of the photoinductive ferromagnetic thin film. Through detection of the tunneling current, the magnet…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.