Semiconductor lasers and method for making the same
US5940424A · kind A · utility
9Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1996 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Sep 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.