Method for sputtering compounds on a substrate
US5942089A · kind A · utility
81Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1996 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Apr 22, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for monitoring and controlling deposition of metal, insulating compounds or other compounds on a substrate by sputtering techniques includes maintaining pulsed, constant, direct current power to the target, sensing the voltage of the target material used in the process, simultaneously rapidly sensing the partial pressure of the reactive gas, and simultaneously biasing the substrate to activate the reactive gas or otherwise energizing the reactive gas in the vicinity of the substrate. An apparatus for practicing the invention is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.