Semiconductor device having improved latch-up protection
US5942783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1996 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Jan 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
A semiconductor circuit includes a semiconductor layer having a surface and a monolithic output stage formed in the semiconductor layer. The monolithic output stage extends to the surface of the semiconductor layer and has a periphery within the semiconductor layer, an output terminal, and a supply terminal. A barrier well is formed in the semiconductor layer and adjacent to at least a portion of the periphery of the monolithic output stage. The barrier well extends to the surface of the semiconductor layer and has a first conductivity. A diode having first and second diode regions is disposed in the semiconductor layer. The first diode region is coupled to the supply terminal. The diode is operable to prevent current flow from the barrier well to the supply terminal when the voltage between the supply and output terminals has a first polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.