Method of making a semiconductor device
US5943568A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1997 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Mar 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device include forming: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element on the first insulating layer, (d) a second insulating layer on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.