Patent · US Expired

Method for manufacturing fine structures

US5943571A · kind A · utility

15Cited by

6References

5Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Herbert Schaefer · Herdorf, DE
Martin Franosch · Munich, DE
Reinhard Stengl · Stadtbergen, DE
Volker Lehmann · Hersbruck, DE
Hans Reisinger · Grünwald, DE
Hermann Wendt · Grasbrunn, DE

Key dates

Filing date	Jun 26, 1997
Grant date	Aug 24, 1999
Priority date	—
Expiry date	Jun 26, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/035
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For manufacturing fine structures, nuclei that define the dimensions of the fine structures are formed on the surface of a substrate in a CVD process upon employment of a first process gas that contains SiH.sub.4 and GeH.sub.4 in a carrier gas. The nuclei can be employed both as a mask, for example, when etching or implanting, as will as active or passive component parts that remain in the structure, for example, as charge storages in the dielectric of an EEPROM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.