Method for extended ion implanter source lifetime with control mechanism
US5943594A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1997 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Aug 20, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for controlling the implantation of ions into a target. An ion source chamber having a filament for causing evolution of the ions to be implanted is provided. An ion source reactant gas is provided for providing a source of the ion species to be implanted. A counteracting gas is provided to counter the chemical transport from or to the filament depending on the reaction between the ion source gas ions and the filament and to compensate for the reaction. The ion source reactant is introduced into the ion source chamber. Parameters regarding electrical or physical characteristics of the filament are measured. The counteracting gas is introduced based upon the measured parameters, wherein the counteracting gas forms ions to compensate for removal or deposition of material on the filament. The ions to be implanted are extracted from ion source chamber and directed to the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.