Method for manufacture of field emission array
US5944573A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Dec 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing diamond crystals onto a field emission cathode. The process involves providing a cathode having a substrate, a gate layer and a plurality of emitters electrically insulated from the gate layer. An electric bias is applied to the gate layer and a ground potential is applied to the emitters. A heat source is positioned adjacent the cathode, and the cathode is exposed to a field of ions for a sufficient period to at least partially clean the emitters. A carbon containing gas is added to the atmosphere adjacent to the cathode such that carbon ions are dissociated from the gas and deposited on the emitters to form a "soot". The temperature of the cathode is then adjusted to a level which allows formation of diamond film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.