Methods of heat-treating semiconductor wafers
US5944889A · kind A · utility
40Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
With a view to optimizing the donor killing process performed in the semiconductor wafer fabricating process, a heat-treating operation is performed in a thermal furnace above at least 900 .degree. C. for a predetermined time so that growth of the initial oxygen precipitates, induced into the crystal lattices during single-crystal growth, is suppressed. Thus, the oxygen precipitates are easily suppressed, irrespective of the concentration of the initial oxygen, so that the yield of the semiconductor device is improved
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.