Semiconductor device and method of fabricating same
US5945692A · kind A · utility
16Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1995 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | May 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (V.sub.th) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si--H chemical bonds at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.