Semiconductor device having device supplying voltage higher than power supply voltage
US5946229A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1998 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Apr 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/213
Abstract
The present invention provides a semiconductor device with small space factor, which controls the application of voltages higher than a power supply voltage to internal circuits. This device includes a first transistor provided with a semiconductor substrate of one conductive type, a first region of second conductivity type formed in the semiconductor substrate, a second region of the second conductivity type formed independent of the first region, a third region of the first conductivity type formed in the first region, and a fourth region of the first conductivity type formed in the first region independent of the third region, having the first region as its back gate, and a second transistor provided with a fifth region of the first conductivity type formed in the second region and a sixth region of the first conductivity type formed in the second region independent of the fifth region, having the second region as its back gate, wherein a back gate bias voltage higher than the power supply voltage applied to the second region is applied to the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.