Method for manufacturing sensor using semiconductor
US5946549A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for manufacturing sensors using semiconductors that is optimal for obtaining compact sensors is described. The method includes the steps of (a) applying an n-type silicon layer to the upper surface of a silicon substrate, (b) applying a p-type silicon layer on either the upper surface of the n-type silicon layer or the upper surface of a base, (c) removing part of the p-type silicon layer by electrochemical etching, (d) joining the base with the p-type silicon layer applied to the n-type silicon layer or joining the n-type silicon layer with the p-type silicon layer applied to the base, (e) removing the silicon substrate and exposing the upper surface of the n-type silicon layer, and (f) forming a strain gage in a section of the upper surface of the silicon substrate so that a portion of the n-type silicon layer facing the upper surface of the base functions as a diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.