Method of fabricating semiconductor device having source/drain layer raised from substrate surface
US5946578A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
Abstract
An oxide film is deposited on a semiconductor substrate on which a field oxide film and a gate electrode are formed. The oxide film is etched back to form a first sidewall insulating film made of the oxide film on a side surface of the gate electrode. Then a silicon film is selectively grown on the gate electrode and on the semiconductor substrate. Thereafter a thermal oxide film is formed on a surface of the silicon film by thermally oxidizing. In the step of thermal oxidation, a thin silicon film deposited on a part of the first sidewall insulating film and a part of the field oxide film is fully oxidized. Thereafter, the thermal oxide film is etched back and thereby a second sidewall insulating film made of the thermal oxide film is formed on a side surface of the silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.