Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers
US5948216A · kind A · utility
11Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/083
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.