Magnetoresistive film
US5948550A · kind A · utility
8Cited by
8References
10Claims
0Family size
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Key dates
| Filing date | Apr 8, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Apr 8, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12944
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive film having a spin valve multi-layer structure has low electrical resistance and high sensitivity. In the magnetoresistive film, an under-layer, a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer are laminated on a substrate in this order. The magnetization direction of the second ferromagnetic layer is fixed by the antiferromagnetic layer, and the magnetization direction of the first ferromagnetic layer is not fixed. The average grain size of the first ferromagnetic layer ranges from 8 to 14 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.