Static RAM having a stable high-resistance load
US5949113A · kind A · utility
4Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1998 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Feb 18, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
A static RAM has a low resistive contact film disposed in direct contact with a storage node of a memory cell and the gate electrode of a driver transistor in a through-hole, and in direct contact with an end portion of a high-resistance load. An accurate and stable resistance can be obtained for the high-resistance load without raising the contact resistance between the storage node and the gate electrode of the driver transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.