Manufacture of dielectric oxide lamination structure and electronic circuit device
US5950103A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Oct 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/10
Abstract
An impurity supply film made of dielectric oxide material is deposited on the surface of an underlying substrate having a surface layer made of different dielectric oxide material. An impurity absorption film made of the same dielectric oxide material as the surface layer of the underlying substrate is deposited on the impurity supply film. The underlying substrate is heated to replace a fraction of at least one type of constituent atoms other than oxygen atoms in the impurity supply film by a fraction of at least one type of constituent atoms other than oxygen atoms in the surface layer of the underlying substrate and in the impurity absorption film, for the whole thickness of the impurity supply film. A method is provided by which impurities are selectively doped in a dielectric oxide material without leaving an electrical barrier on the surface of the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.