Inductively coupled plasma chemical vapor deposition apparatus
US5951773A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Mar 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is an inductively coupled plasma chemical vapor deposition apparatus including: a vacuum reaction chamber having an interior, bounded in part by a dielectric shield, the dielectric shield being lined with an oxygen-less silicon layer formed on its interior surface; a gas introducing unit for introducing a reactant gas to the interior of the vacuum reaction chamber; an antenna where radio frequency power is applied, the antenna being arranged outside the vacuum reaction chamber and adjacent to the dielectric shield; a coupling unit for coupling a radio frequency power source to the antenna; a stage for heating a work piece to be processed within the interior of the vacuum reaction chamber; and an exhaust unit for exhausting remnant gases from the interior of the vacuum reaction chamber. The oxygen-less silicon layer can be either an amorphous silicon layer, silicon nitride layer or silicon carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.