CVD precursors and film preparation method using the same
US5952047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.