Silicon oxide on a substrate
US5952108A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Sep 26, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.