Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system
US5952673A · kind A · utility
6Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Aug 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The optical semiconductor device comprises a multiple quantum well structure of an AlGaInAs system material formed on an InP semiconductor substrate. The multiple quantum well structure comprises a barrier layer of a below 1.0 .mu.m of PL wavelength and a below 4.5 nm of film thickness active layer alternately laid one on another. An above 0.5% compressive strain is applied to the active layer. Thus the AlGaInAs/InP system optical semiconductor can have good temperature characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.