Semiconductor substrate and method for straightening warp of semiconductor substrate
US5952679A · kind A · utility
17Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Oct 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of grooves are formed in a SiC substrate consisting of an n.sup.- -type epitaxial layer and a p-type epitaxial layer layered on the surface of an n.sup.+ -type monocrystalline SiC semiconductor substrate. These grooves are formed in a grid on the SiC substrate. Heat treatment is then carried out to straighten warp of the SiC substrate caused by the growth of the epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.