Patent · US Expired

High power MOS transistor

US5952869A · kind A · utility

7Cited by

6References

3Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Frank Fattori · Clapham, GB
Walter Bucksch · Freising, DE
Erich Bayer · Straubing, DE
Kevin Scoones · San Jose, US

Key dates

Filing date	Jul 26, 1996
Grant date	Sep 14, 1999
Priority date	—
Expiry date	Jul 26, 2016

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A high power MOS transistor consists of a large number of sub-transistors (T1 to T6) connected in parallel. The gate electrodes of the sub-transistors (T1 to T6) can be driven individually via controllable switching elements (SW1 to SW6; SQ1 to SQ5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.