Semiconductor laser
US5953357A · kind A · utility
13Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Aug 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An AlGaInP-based buried-ridge semiconductor laser includes an n-type GaAs current blocking layer 8 buried in opposite sides of a ridge stripe portion 7 which is made of an upper-layer portion of a p-type AlGaInP cladding layer 4, p-type GaInP intermediate layer 5 and p-type GaAs contact layer 6. The ridge stripe portion 7 includes tapered regions 7a having the length of L1 at cavity-lengthwise opposite ends of the ridge stripe portion 7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.