Method of forming a capacitor for a semiconductor device
US5953618A · kind A · utility
4Cited by
8References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 1996 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Oct 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A method of forming a capacitor for a semiconductor memory device, includes the steps of forming first and second insulating layers to form a first contact hole on a substrate, forming a first conductive layer and a third insulating layer within the first contact hole so as to define a second contact hole, forming a second conductive layer within the second contact hole, removing the second and third insulating layers to form a storage electrode, and forming a dielectric layer and a third conductive layer on the storage electrode to form a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.