Semiconductor device with perovskite capacitor and its manufacture method
US5953619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1998 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Mar 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.