Method of thin film forming on semiconductor substrate
US5953629A · kind A · utility
22Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ultra fine powder of metal dispersed in organic solvent is applied onto a surface of a semiconductor substrate, and heated to evaporate solvent and to sinter the ultra fine powder of metal. Deep contact holes or via holes, and grooves or trenches in the substrate can be filled up with metal, and the surface of the substrate can be covered with thin metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.