Method for manufacturing self-aligned titanium salicide using two two-step rapid thermal annealing steps
US5953633A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing self-aligned titanium salicide is provided which includes the steps of forming a LOCOS isolation region on a silicon substrate, forming a titanium layer on the surface of the silicon substrate, performing a first two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases to convert the titanium layer into a titanium salicide layer, selectively etching the silicon substrate to remove the titanium layer that has not reacted with the silicon substrate, and performing a second two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases. Each of the two-step rapid thermal anneals include a first pre-heat step and a second anneal step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.