Chemical mechanical polishing slurry useful for copper substrates
US5954997A · kind A · utility
283Cited by
16References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1996 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Dec 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.