Semiconductor diode laser and method of manufacturing same
US5956359A · kind A · utility
8Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1996 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Jun 14, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a laser with a multi quantum well active layer in which a portion of the quantum well and barrier layers is provided with a compression stress, while another portion is provided with an oppositely directed tensile stress. Said stresses are overcompensated such that the net stress is a tensile stress. Preferably, the laser comprises one or several quantum well layers with a compression stress and a number of barrier layers with an excess tensile stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.