Methods of fabricating and contacting ultra-small semiconductor devices
US5956568A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1996 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Mar 1, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/979
Abstract
A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produced in the layers at the mesa sidewall and the first layer overlying the mesa is in contact with the last layer overlying the substrate adjacent the mesa. A spacer of nonconductive material is formed on the discontinuity and the plurality of overlying layers are etched, using the spacer as a mask, so as to form a contact area overlying the mesa and a contact area overlying the substrate adjacent the mesa, and a semiconductor device positioned adjacent the sidewall beneath the spacer and between the contact areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.