Semi-insulating aluminum nitride sintered body
US5958813A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Nov 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The semi-insulating aluminum nitride sintered body of this invention is composed of aluminum nitride particles, electroconductive fine particles having a volume inherent resistivity value of not larger than 10.sup.2 .OMEGA..multidot.cm which are dispersed among the aluminum nitride particles and an intergranular phase formed from an oxide containing at least one element selected from the group consisting of Ti, Ce, Ni, Ta, Y, Er and Yb, or from Si. This sintered body has a volume inherent resistivity value of 10.sup.4 to 10.sup.11 .OMEGA..multidot.cm, and is very useful, for example, as a member for removing static electricity, or a dielectric layer of an electrostatic chuck. Since dispersions of volume inherent resistivity values are very small, a material having a volume inherent resistivity value within a certain range can be produced with good reproducibility. Accordingly, the yield is high, and the productivity is very good.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.