High Q integrated resonator structure
US5959515A · kind A · utility
23Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Aug 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high Q integrated inductor-capacitor (L-C) resonator (200) includes a planar inductor (201) having a plurality of turns and a serially connected first and second capacitor (205, 207) that is connected in parallel with the planar inductor (201). The first and second capacitors (205, 207) are positioned within at least one turn of the planar inductor (201) for reducing the parasitic interconnection resistance between the planar inductor (201) and first and second capacitor (205, 207) and also increasing the Q factor of the L-C resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.