Thin film resistor for optoelectronic integrated circuits
US5960014A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Nov 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0261
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film resistor for optoelectronic integrated circuits is described. A stable low resistance, thin film resistor comprising a bilayer of platinum on titanium is provided. Advantageously, the resistive layer is protected by a layer of dielectric, e.g. silicon dioxide or silicon nitride to reduce degradation from humidity an under high temperature operation at 300.degree. C. or more. The resistor may be formed on various substrates, including silicon dioxide, silicon nitride and semiconductor substrates. Applications for optoelectronic integrated circuits include integrated resistive heaters for wavelength fine tuning of a semiconductor laser array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.